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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1705 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) good linearity of h fe low collector saturation voltage- : v ce( sat ) = 0.5v(max.)@ i c = 6a complement to type 2sb1154 applications designed for power switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 130 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cp collector current-pulse 20 a collector power dissipation @ t c =25 70 p c collector power dissipation @ t a =25 3 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1705 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 80 v v ce (sat)-1 collector-emitter saturation voltage i c = 6a; i b = 0.3a b 0.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a; i b = 1a 1.5 v v be (sat)-1 base -emitter saturation voltage i c = 6a; i b = 0.3a b 1.5 v v be (sat)-2 base -emitter saturation voltage i c = 10a; i b = 1a 2.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 50 a h fe-1 dc current gain i c = 0.1a; v ce = 2v 45 h fe-2 dc current gain i c = 3a; v ce = 2v 90 260 h fe-3 dc current gain i c = 6a; v ce = 2v 30 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 20 mhz switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c = 6a, i b1 = -i b2 = 0.6a; v cc = 50v 0.2 s ? h fe- 2 classifications q p 90-180 130-260 isc website www.iscsemi.cn 2 |
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